Custom 4H-N 800um SiC Substrate Manufacturer

As a leading Silicon Carbide (SiC) substrate manufacturer in China, we specialize in high-performance custom SiC wafers, including industry-leading 800µm thickness on 6-inch substrates. While standard 4H-N type SiC wafers typically measure 350µm, we excel in producing 500µm and 800µm variants tailored for high-power, high-voltage devices requiring exceptional mechanical stability and thermal performance.

All our substrates undergo precision double-side polishing, achieving an outstanding surface roughness of Ra < 0.5 nm. This ensures superior epitaxial layer quality and device yield. We deliver both standard specifications and custom-engineered solutions to meet your project's exact requirements for thickness, diameter, and polytype.

• Size: 6inch;
• Diameter: 150mm±0.25;
• Thickness: 800um±25;
• Surface Orientation: 4°toward[11-20]±0.5°;
• Primary Flat orientation:[1-100]±5°;
• Primary Flat Length:47.5mm±1.5;
• Secondary flat: None;
• Micropipe: ≤0.2/cm2;
• Resistivity: 0.015~0.028Ω;
• TTV≤10um;
• Warp≤35um;
• Bow≤35um;
• Surface Roughness: Si face Ra＜0.5 nm;
• Surface finish: Double Side Polish, Si Face CMP;
• Packing: Multi-wafer Cassette Or Single Wafer Container;

Partner with us for reliable, high-purity SiC substrates that push the boundaries of power electronics, RF devices, and advanced semiconductor applications. Contact us Now!