SiC Substrate Wafer (Production Grade)

As the professional manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, Homray Material Technology provide high quality production grade silicon carbide(SiC) substrate wafers. We has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer silicon carbide substrate of polytype 4H in different quality grades for researcher and industry manufacturers,Which is applied in GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.

Application




The major silicon carbide substrate are 2 inch, 3 inch, 4 inch single crystal substrate, widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source. SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity. The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond.