4 inch SiC Substrate Manufacturer

Homray Material Technology as the famous SiC Substrate Wafer Manufacturer and supplier, we offering 4 inch SiC Wafer D grade and P grade with Conductive N type and Semi-insulated SI type. We have compelte SiC production line, SiC Boule growth, As cut SiC wafer multi-wire cutting and SiC wafer lapping,polishing,inspction.....Domestic and foreign customers choose HMT as their qualified 4 inch SiC wafer manufacturer. 

4 inch SiC Wafer Basic Spec

Diameter: 100±0.5mm

Polytype: 4H

Dopant: N type Nitrogen

Thickness: 350±25um

Surface: Si face CMP  C face Polished

Package: Cassette

Leadtime: 4 weeks

Transportation: International Express