D Grade 4 inch SiC Substrate Manufacturer

HMT company foucs on Conductive N type SiC Substrate produce,we still suppy 4 inch N type SiC substate and 4 inch SiC ingot both for Dummy grade and Production grade. We also produce high quality 6 inch 8 inch SiC crystals both conductive type and semi-insulating type. Cooperating with HMT company you can get high quality SiC substate wafer ,preferential price and professional technical support. Please contact us for more details.

As the third generation semiconductor material, SiC material compared with Si materials, with large band gap width, high breakdown electric field, high saturated electron drift speed, high thermal conductivity, high radiation resistance and other characteristics, suitable for manufacturing high temperature, high pressure, high frequency, high power devices.


 

From photovoltaic to new energy vehicles, SiC downstream market demand is strong, especially with the continuous growth of electric vehicles and new energy demand, the demand for SiC materials has shown a blowout growth trend.

GaN-on-SiC Epitaxial Wafer is produced by growing GaN epitaxial layer on semi-insulated SiC substrate, which can be made into microwave RF devices and applied in 5G communication fields. SiC-on-SiC Epi Wafer is produced on conductive SiC substrate to produce SiC Epitaxial Wafer, which can be made into power devices (SBD,MOSFET etc.)and applied in electric vehicles, new energy, energy storage, rail transit and other fields.