Product Description
As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, Homray Material Technology offers the best price on the market for 6 inch D grade Silicon Carbide substrate wafers. The SiC substrate wafer widely used in electronic devices with high power and high frequency, light emitting diode (LED) and other. light-emitting diode (LED) is the use of semiconductor electrons and holes in a combination of electronic components, is an energy-saving cold light source.
Silicon Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. Silicon carbide is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).
Blue LEDs on SiC-basis have been commercially available for several years now. The next important step will be the development of blue SiC-laser-diodes, which can be used to increase data storage capacity among many other applications. The use of SiC-based UV- diodes may also find various applications, i.e. monitoring of combustion processes, all sorts of UV-detection while detector is almost solar-blind.
Electronics based on SiC shows advantages compared to Si-devices, where environmental conditions are adverse, i.e. ionizing radiation, heat-aggressive chemicals. For instance, SiC-based electronics would help to reduce weight and therefore costs of spacecraft, since SiC-devices showed to be much more resistant to ionizing radiation than Si-devices. Thus, a reduction of radiation-shielding is possible. Further, they may reduce or eliminate the use of cooling systems that have to be implemented as soon as Si-electronics is used.
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