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Home > Products > SiC Substrate Wafer > 4 inch P Grade SiC Wafer Manufacturer

4 inch P Grade SiC Wafer Manufacturer

Type: 4H-N 
Dimension: 4 inch
Grade: D R P
Product Name: SiC Substrate

Product Description

As the 8 inch SiC Wafer global manufacturer and supplier, HMT produces Conductive N type 4 inch SiC Wafer with D grade R grade and P grade. The Si face is CMP and C face Polished. Acutally, We still keep 2 inch SiC wafer and 4 inch SiC Wafer capacity allocation for some customers. If you still use 2 inch or 4 inch SiC wafer and can't find a reliable and stable supplier, come and contact Homray Material Technology.

4 inch SiC Boules



4 inch SiC Raw Cut Wafer and Polished Wafer

 

Power devices are one of the most important basic components in power electronics industry, which are widely used in electric energy conversion and circuit control of power equipment.  The SiC base gallium nitride (GAN-on-sic) epitaxial wafer grown on semi-insulated SiC substrate can be further made into microwave radio frequency devices. Microwave radio frequency devices are the basic components of signal sending and receiving and the core of wireless communication, mainly including radio frequency switches, LNA, power amplifiers, filters and other devices.  

 

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M.P: +86-15366208370 ; +86-15366203573  
E-mail: kim@homray-material.com ; tina@homray-material.com
HMT Gallium Nitride (GaN) Wafer Website: www.ganwafer-hmt.com