SiC Substrate Wafer Manufacturer

As the leading manufacturer and supplier of SiC (Silicon carbide) substrate wafer, Homray Material Technology can provide dummy grade silicon carbide SiC substrate wafer 4inch to 8 inch,both N type and semi insulating type. The resistivity of Conductive type SiC Substrate wafer is 0.015-0.028ohm.cm，semi-insulated type is >1E9 ohm.cm. We also offering Research Grade and Production Grade for semiconductor application.

Silicon carbide wafer is the foremost semiconductor material that can operate at higher temperature, power level, and voltage. These unique properties of silicon carbide wafer can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.


Homray Material Technology provide high quality silicon carbide substrate to electronic and optoelectronic industry. Silicon carbide subsrate wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC substrate wafer is more suitable for high temperature and high power device. Silicon carbide substrate can be supplied in diameter 2 inch,3 inch,4inch,6inch , both 4H-N or 4H-SI.