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4 Inch SiC Ingots
Diameter: 100±0.25mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade -
6 Inch SiC Ingots
Diameter: 150±0.2mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade -
4H-N SiC Crystal
Diameter: 100mm/150mm
Thickness:10~15mm
Type: 4H-N Conductive
Grade: D Grade / P Grade -
4&6英寸碳化硅晶棒晶锭
长度:Min ≥15mm
等级:测试D级/产品P级
类型:导电N型/半绝缘SI型
直径:100±0.25mm/150±0.2mm
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导电型&半绝缘型碳化硅晶锭晶棒
长度:Min ≥15mm
尺寸:4英寸及6英寸
类型:导电N型/半绝缘SI型
包装:单晶锭密封包装 -
SiC Ingot Manufacturer For Laser Cutting
Diameter: 100mm 150mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade -
SiC Substrate Wafer (Dummy Grade)
Product Name: Silicon Carbide Substrate
Grade: Dummy Grade
Type: 4H-N ; 4H-SI
Micropipe Density: ≤10 cm-2 -
4 inch Dummy SiC Substrate
Product Name: SiC Substrate
Grade: Dummy Grade
Type: 4H-N ; 4H-SI
Thickness: 350um,500um -
碳化硅衬底片 4英寸测试级SiC衬底晶片
等级:测试级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型 -
SiC Substrate Wafer (Research Grade)
Product Name: Silicon Carbide Substrate
Grade: Research Grade
Type: 4H-N ; 4H-SI
Micropipe Density: ≤5 cm-2 -
4H-N/4H-SI碳化硅衬底晶片
等级:研究级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型 -
SiC Substrate Wafer (Production Grade)
Product Name: Silicon Carbide Substrate
Grade: Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤1 cm-2 -
碳化硅晶片 产品级SiC衬底晶片
等级:产品级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型
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SiC Substrate Wafer (Ultralow MPD Grade)
Product Name: Silicon Carbide Substrate
Grade: Ultralow MPD Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤0.5 cm-2 -
碳化硅衬底晶片 超低MPD碳化硅晶片
等级:超低微管密度碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型 -
8 inch SiC Substrate
Type: 4H-N
Diameter:200mm
Grade: Mechanical
Product Name: SiC Substrate