SiC Substrate Manufacturer

SiC Substrate manufacturer and supplier HMT company offering 2 inch to 8 inch SiC Substrate Conductive N type. We provide normal thickness 350±25um and seed substrate 500±25um thickness for 4H-N type SiC substrates. If you want to find a reliable and stable SiC substrate manufacturer, HMT company will be your best choice. 

SiC Substrate Basic Spec
Dimension：2 inch 4 inch 6 inch 8 inch
Thickness: 350um 500um
Dopant: Conductive N nitrogen
Resistivity: 0.015-0.028ohm.cm
Orientation: off axis 4.0 toward<1120>±0.15°
Grade: D grade R grade P grade
MPD: Different grade has different MPD parameters
Surface: Si face CMP C face polished

 

At present, SiC material epitaxy is mainly to control the thickness of epitaxy and doping concentration of two parameters.  The epitaxial parameters are different according to different device designs.  Generally speaking, the larger the thickness of epitaxial, the higher the voltage that the device can withstand, but the larger the thickness of epitaxial layer, the more difficult it is to prepare high quality epitaxial chip, especially in the field of high voltage, it is very difficult to control defects.  

SiC wafer after epitaxial growth is mainly used to manufacture power devices, radio frequency devices and other discrete devices, can be widely used in new energy vehicles, 5G communications, photovoltaic power generation, rail transit and other modern industrial fields.