R Grade 6 inch SiC Substrate Wafer Manufacturer

Buy SiC Substrate Wafer from China manufacturers can select HMT company which providing 6 inch SiC wafer with Research Grade. We provide both 4H-N and 4H-HPSI type SiC Substrate Wafers for different applications. Research Grade 6 inch SiC Wafers have low micro density low TTV LTV etc...used for lab,high school researching projects. We cooperate with worldwide research labs and famous universities. 

 

Advantages of silicon carbide substrate:

The lattice constants of silicon carbide substrate and gallium nitride (GaN) epitaxial layer match, and the chemical properties are compatible.

The thermal conductivity of silicon carbide is excellent (more than 10 times higher than that of sapphire) and the thermal expansion coefficient of GaN epitaxial layer is similar.

Silicon carbide is a conductive semiconductor, can make a vertical structure device, its two electrodes are distributed on the surface and bottom of the device, can solve the shortcomings of the horizontal structure of the sapphire substrate must be packaged.

The silicon carbide substrate does not require a current diffusion layer, so the light will not be absorbed by the material of the current diffusion layer, which in turn improves the light output efficiency.