SiC Substrate Wafer (Ultralow MPD Grade)

As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, Homray Materail Technology can provide 4inch and 6inch sillicon carbide substrate wafer with ultralow micropipe density. 4H-N type MPD ≤0.5cm^-2.

SiC substrate wafer are mainly divided into conductive type and semi-insulating type. The conductive SiC substrates are n-type substrates, used for epitaxial GaN based LED and other optoelectronic devices, SiC based power electronics devices, and semi-insulated silicon carbide substrates are mainly used for epitaxial manufacturing, like GaN high-power RF devices.We also manufacture HPSI type with high purity semi-insulation，it is different from semi-insulation. SiC substrate HPSI type has high electron mobility.Semi-insulation is a high resistance material with high resistivity. It is generally used as a substrate for microwave devices and does not conduct electricity.


SiC material has the advantages of low lattice mismatch with GaN, high thermal conductivity. The third generation of semiconductors represented by SiC has a high bandwidth, high thermal conductivity, high field breakdown, high saturation electron drift rate, stable chemical properties, high hardness, abrasion resistance, high bond.Silicon carbide substrate or SiC Epitaxial wafer can apply to variety applications like Power electronic switches, LED technology and Hybrid Electric vehicles.