SiC Substrate Wafer Manufacturer碳化硅衬底片晶片厂家, 4H-N/4H-SI SiC Substrate Wafer Manufacturer 4H-N/4H-SI碳化硅衬底片生产厂家

HPSI 8 Inch SiC Substrate Wafer Manufacturer

Type:HPSI
Diameter: 200±0.2mm
Thickness: 500±25um
Grade: D and P
6 inch P Grade SiC Wafer Manufacturer

Type: 4H-N
Diameter: 6inch / 4inch
Grade: P Grade / D Grade
Product Name: SiC Substrate
6 inch D Grade SiC Wafer Manufacturer

Grade: D Grade
Type: 4H-N
Dimension：150mm
Thickness：350±25um
4 inch P Grade SiC Wafer Manufacturer

Type: 4H-N
Dimension: 4 inch
Grade: D R P
Product Name: SiC Substrate
D Grade 4 inch SiC Substrate Manufacturer

Product Name: SiC Substrate
Grade: Dummy Grade
Type: 4H-N
Thickness: 350um
2 inch SiC Wafer Manufacturer

Product Name: SiC Substrate
Grade: Dummy Grade
Type: 4H-N
Dimension: 2 inch
Conductive 4H-N 6 Inch SiC Substrate Manufacturer

Dimension：6inch
Grade: Dummy Grade
Type: 4H-N
Thickness: 350um
R Grade 6 inch SiC Substrate Wafer Manufacturer

Dimension: 6 inch
Grade: Research Grade
Type: 4H-N ; 4H-SI
Thickness: 350um 500um
SiC Substrate Wafer (Production Grade)

Product Name: Silicon Carbide Substrate
Grade: Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤1 cm^-2
4 inch SiC Substrate Manufacturer

Dimension:4inch
Grade:D/P Grade
Type: 4H-N ; 4H-SI
Thickness: 350um or 500um
SiC Substrate Wafer (Ultralow MPD Grade)

Product Name: Silicon Carbide Substrate
Grade: Ultralow MPD Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤0.5 cm^-2
Low MPD 4 inch SiC Substrate Manufacturer

Dimension: 4 inch
Type: 4H-N
MPD: <0.5cm²Grade:Production Grade
2 inch As-cut SiC Wafer T-1200um

Diameter: 50.8mm
Type:Conductive N type
Thickness: 1200um
Package: Cassette
2 inch Raw Cut SiC Wafer T-1100um

Diameter: 50.8mm
Type:Conductive N type
Thickness: 1100um
Package: Cassette
2 inch As Cut SiC Wafer Manufacturer

Type:Conductive N type
Diameter: 2inch / 4inch
Thickness: 600um Customized
Package: Cassette
2英寸碳化硅切割片-900um厚

直径: 50.8mm
类型: 导电N型
厚度: 900um
包装: 卡塞盒

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