SiC Substrate Wafer Manufacturer碳化硅衬底片晶片厂家, 4H-N/4H-SI SiC Substrate Wafer Manufacturer 4H-N/4H-SI碳化硅衬底片生产厂家

6英寸碳化硅切割晶片

直径: 150mm
类型: N type or SI type
厚度: 600um
包装: 卡塞盒
4H-N Unpolished SiC Wafer

Diameter: 100mm 150mm
Type: 4H-N Conductive
Thickness: About 440um
Package: Cassette
4H-SI Raw-cut SiC Substrate

Diameter: 100mm 150mm
Type: 4H-SI semi-insulating
Thickness: About 600um
Package: Cassette
Without Polished Raw SiC Wafer

Diameter: 100mm 150mm
Type: 4H-N or 4H-SI
Thickness: About 440um 600um
Package: Cassette
Without Lapping Raw SiC Wafer

Diameter: 100mm 150mm
Type: 4H-N or 4H-SI
Thickness: About 440um 600um
Package: Cassette
As-cut SiC Wafer With Lowest MPD

Diameter: 100mm 150mm
Type: 4H-N Conductive
Thickness: About 400um
Package: Cassette
N Type As-cut SiC Wafer 400um Thickness

Diameter: 100mm 150mm
Type: 4H-N Conductive
Thickness: About 440um
Package: Cassette
Silicon Carbide Epitaxial Wafer

Size: 4'' 6''
Type: N-Type/ P-Type
Dopant: Nitrogen/Aluminum
Thickness:0.2~50μm
碳化硅同质外延片SiC-on-SiC

尺寸:4英寸 6英寸
外延: N-Type/ P-Type
参数: Nitrogen/Aluminum
外延厚度:0.2~50μm

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