4 Inch SiC Ingots/SiC Boule

As the leading manufacturer of SiC Boule, HMT provide dummy and production grade SiC boules with high quality. SiC Ingots SiC boule can be cut to 4 inch and 6 inch N type SiC substrate. Meanwhile,SiC boules have been widely used by many ingot wire-saw manchine manufacturers and laser cutting machines manufacturers in domestic and abroad.



HMT has a complete SiC(silicon carbide) wafer substrate production line integrating SiC ingots growth, crystal processing, wafer processing, polishing, cleaning and testing. We supply commercial 4H SiC wafers with semi insulation and conductivity in on-axis or off-axis, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.



Slicon carbide devices have more obvious advantages compared with silicon based devices, which are embodied in:

(1) Lower impedance, can reduce the product volume, improve conversion efficiency;
(2) higher frequency, the working frequency of silicon carbide devices can reach 10 times of silicon based devices, and the efficiency does not decrease with the increase of frequency, can reduce the energy loss;
(3) Can operate at a higher temperature, while the cooling system can be done more simply. Silicon carbide power devices can work at temperatures above 600℃, four times that of the same silicon based devices, and can withstand more extreme working environments.
 

SiC Ingots Package