Epitaxial layer is based on wafer, through epitaxial process to grow a specific single crystal film, substrate wafer and epitaxial film together called epitaxial sheet. The SiC Epitaxial layer is grown on the conductive SiC substrate to prepare the SiC homogeneous epitaxial sheet, which can be further made into Schottky diodes, MOSFETs, IGBTs and other power devices, among which 4H-SiC substrate is the most used.

In recent years, SiC substrate manufacturers have accelerated the mass production progress of 8 inch SiC substrate, and at last year, the industry leader Wolfspeed has launched the world's first 8-inch SiC wafer fab, which also means that 8 inch substrates officially opened the mass production curtain.

SiC material has wide band gap, high breakdown electric field, high thermal conductivity, high electron mobility and radiation resistance, SiC based SBD and MOSFETs are more suitable for high frequency, high temperature, high pressure, high power and radiation resistance environment. With the same power level, the SiC device can meet the requirements of higher power density and more compact design.

SiC industry chain is mainly composed of single crystal substrate, epitaxy, devices, manufacturing and testing links. HMT offer the best price of 4 inch and 6 inch SiC ingots and SiC wafer with high quanlity.we also support customzied SiC ingots and substrate upon your requirements.

Recently, Toyota announced that it will launch a new bZ4X SUV battery electric vehicle in May this year. According to Toyota Industrial Corporation's announcement on April 13, the bZ4X uses its in-car charging device ESU, which integrates an in-car charger with SiC technology and a DC-DC converter.

HMT offer 4H-SiC substrate and SiC ingots, both 4 inch and 6 inch SiC wafer are available in HMT. SiC substrate can be divided into: semi-insulating type and conductive type. 4H-SI type SIC Substrate has high resistivity (resistivity ≥108 ω ·cm), semi-insulating substrate and heterodyne gallium nitride epitaxy can be used as radio frequency device material, mainly applied with the above scene 5G communication, national defense and other fields

SiC substrate is the cornerstone of GaN and SiC application in the third generation semiconductor materials. Due to the limitation of technology and process level, large-scale application of GaN material as substrate is still facing challenges. Its application mainly uses sapphire, silicon wafer or semi-insulating SiC wafer as substrate, and fabricate GaN devices by epitaxy growth, which is mainly used in the field of macro station communication radio frequency.

Electric vehicles and 5G infrastructure drive the demand for power components, and the third generation semiconductor plays an important role. Major countries such as China and the United States have promoted policies, and enterprises at home and abroad are also rushing to invest. Industry analysts say SiC substrates are the biggest key to development.

SiC Material has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume.