HMT offer 4H-SiC substrate and SiC ingots, both 4 inch  and  6 inch SiC wafer are available in HMT. SiC substrate can be divided into: semi-insulating type and conductive type. 4H-SI type SIC Substrate has high resistivity (resistivity ≥108 ω ·cm), semi-insulating substrate and heterodyne gallium nitride epitaxy can be used as radio frequency device material, mainly applied with the above scene 5G communication, national defense and other fields; Another conductive N type SiC wafer with low resistivity (0.015~0.025 Ω · cm) , the electrical conductivity of SiC substrate with homogeneous epitaxial material can be used to make power device, the main application scenario for the electric car, department of energy and other fields, both have application scenario is widely, spread to many industries, such as wide range of market characteristics.
 

Silicon carbide SiC semiconductor as the core material of the newly developed wide band gap semiconductor, with its production of devices with high temperature resistance, high voltage resistance, high frequency, high power, radiation resistance and other characteristics, has the advantages of fast switching speed, high efficiency, can greatly reduce the product power consumption, improve the energy conversion efficiency and reduce the product volume. It is mainly used in the RF field represented by 5G communication, national defense, aerospace and power electronics field represented by new energy vehicles and "new infrastructure". It has a clear and considerable market prospect in both civil and military fields. Silicon carbide semiconductor will play an important role in 5G base station construction, uHV, intercity high-speed railway and urban rail transit, new energy vehicle charging pile, big data center and other new infrastructure fields. Therefore, SiC as a representative of the wide band gap semiconductor is facing the main battlefield of the economy, facing the major national needs of the strategic industry.