Electric vehicles and 5G infrastructure drive the demand for power components, and the third generation semiconductor plays an important role. Major countries such as China and the United States have promoted policies, and enterprises at home and abroad are also rushing to invest. Industry analysts say SiC substrates are the biggest key to development.

SiC Material has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume.

Silicon carbide (SiC), as a representative material of the third generation of semiconductor materials, is a silicon and carbon compound with 1X1 covalent bond. It is said that silicon carbide was first discovered in meteorites 4.6 billion years ago when the solar system was born, so it is also known as the semiconductor material that has experienced 4.6 billion years of time.

GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. By 2007 this is predicted to soar to $4.5 billion, with GaN-based LEDs, lasers and electronic devices contributing $4 billion, $402 million and $129 million, respectively.Today, GaN substrates are produced by vapor-phase transport

Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.This can be used in a high-capacity wireless network with coverage over a radius of several kilometers. In areas where fiber-optic cable is difficult to lay, to achieve high-speed wireless communications of several gigabits per second, one promising approach is to use high-frequency bands, such as the W band, which uses a wide frequency band.

We are pleased to offer GaN substrate to our customers including many who are developing better and more reliable for GaN HEMTs, which have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. Second generation technology with shorter gate lengths will be addressing higher frequency telecom and aerospace applications. Our GaN substrate has excellent properties, it’s a very hard, mechanically stable wide bandgap semiconductor material with high heat