SiC(Silicon Carbide) TCB Nozzle Manufacturers (2025-2029)

6 inch SiC Wafer Supplier For SiC Finishing Parts

Diameter: 150mm
Type: Conductive N type
Thickness: 400~1600um
Package: Cassette
2 inch As-cut SiC Wafer T-1200um

Diameter: 50.8mm
Type:Conductive N type
Thickness: 1200um
Package: Cassette
2 inch Raw Cut SiC Wafer T-1100um

Diameter: 50.8mm
Type:Conductive N type
Thickness: 1100um
Package: Cassette
2 inch As Cut SiC Wafer Manufacturer

Type:Conductive N type
Diameter: 2inch / 4inch
Thickness: 600um Customized
Package: Cassette
2英寸碳化硅切割片-900um厚

直径: 50.8mm
类型: 导电N型
厚度: 900um
包装: 卡塞盒
4 inch As-cut SiC Wafer

Diameter: 100mm
Type: SI type Semi-insulated
Thickness: 600um
Package: Cassette
6 inch As-cut SiC Wafer

Diameter: 150mm
Type: N type or SI type
Thickness: 600um 800um Customized
Package: Cassette
6 inch Unpolished SiC Wafer T-900um

Diameter: 150mm
Type:Conductive N type
Thickness: 900um
Package: Cassette
6英寸碳化硅切割晶片

直径: 150mm
类型: N type or SI type
厚度: 600um
包装: 卡塞盒
4H-N Unpolished SiC Wafer

Diameter: 50.8mm 100mm 150mm
Type: 4H-N Conductive
Thickness: 500um 900um 1200um etc
Package: Cassette
4H-SI Raw-cut SiC Substrate

Diameter: 100mm 150mm
Type: 4H-SI semi-insulating
Thickness: About 600um
Package: Cassette
Without Polished Raw SiC Wafer

Diameter: 100mm 150mm
Type: 4H-N or 4H-SI
Package: Cassette
Thickness: 500um 600um 800um etc.
Without Lapping Raw SiC Wafer

Diameter: 100mm 150mm
Type: 4H-N or 4H-SI
Thickness: About 440um 600um
Package: Cassette
As-cut SiC Wafer With Lowest MPD

Diameter: 100mm 150mm
Type: 4H-N Conductive
Thickness: About 400um
Package: Cassette
N Type As-cut SiC Wafer 400um Thickness

Diameter: 50.8mm 100mm 150mm
Type: 4H-N Conductive
Thickness: 400um 500um 600um etc
Package: Cassette

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