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Home > Products > As-cut SiC Wafer > 2 inch Raw Cut SiC Wafer T-1100um

2 inch Raw Cut SiC Wafer T-1100um

Diameter: 50.8mm
Type:Conductive N type 
Thickness: 1100um
Package: Cassette

Product Description

HMT offer guaranteed 2 inch As Cut SiC wafer without lappling and polishing for diamond grinding. The mainstream is 6 inch un-polished raw SiC wafer in the market now. But HMT still keep few 4 inch as-cut SiC wafer capacity allocation for some our customers. Meanwhile, the newest 8 inch without lapping and polishing SiC wafer are available in HMT. Our leadtime of as-cut SiC wafer will be 4 weeks upon purchase quantity. Please feel free to contact us for 2 inch Raw Cut SiC wafer no polishing parameters and quotation.

2 inch As Cut SiC Wafer Basic Spec:

Diameter: 50.8±0.38mm

Polytype: 4H

Dopant: N type Nitrogen

Thickness: 600um 900um 1100um 1200um  Customized

Surface: Si face cut/ C face Cut

Package: Cassette

Leadtime: 4 weeks

Transportation: International Express

We use Cassette package 2 inch Raw cut Wafer and deliver to customers via International Express。 

 

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M.P: +86-15366208370 ; +86-15366203573  
E-mail: kim@homray-material.com ; tina@homray-material.com
HMT Gallium Nitride (GaN) Wafer Website: www.ganwafer-hmt.com