4H-SI Raw-cut SiC Substrate

Find SiC Raw-cut wafer manufacturers and suppliers here in China HMT, we supply semi-insulating type of As-cut SiC substrate both for 4 inch and 6 inch. Raw-cut SiC substrate we also called un-processed SiC wafer which means without lapping and polishing process after slicing from semi-insulating SiC ingots. If customers want to test their lapping and polishing equipment, contact us now and send us an inquiry. You can get good quality and competitive price for As-cut SiC wafer!

Package of Raw-cut SiC wafer in HMT:
 

SiC has high energy conversion efficiency, and will not decrease with the increase of frequency, silicon carbide device operating frequency can reach 10 times of silicon based devices, the same specification of silicon carbide MOSFET total energy loss is only 30% of silicon based IGBT.  Silicon carbide materials will gradually replace silicon in the fields of high temperature, high frequency and high frequency, and play an important role in 5G communications, aerospace, new energy vehicles and smart power grids.  

In high power applications, the third generation semiconductor has wide energy gap, high temperature resistance and high power density characteristics;  In high frequency applications, it has the characteristics of low energy consumption and good heat dissipation.  Demand for electric vehicles, 5G infrastructure and fast charging are the main growth drivers.