4 Inch 4H-SiC Substrate for Semiconductor Applications

A 4 inch 4H-SiC substrate provides a practical 100 mm platform for semiconductor research, process development and device-related material evaluation. Compared with larger wafer formats, the 4 inch size remains useful for projects that require a mature wafer diameter while maintaining manageable material consumption and process costs.

HMT provides 100 mm 4H-SiC substrates in conductive and semi-insulating configurations. The substrate specification can be selected according to electrical requirements, surface condition, thickness and intended semiconductor process.

100 mm 4H-SiC Substrate Specifications

The standard configuration available from HMT includes a 4 inch wafer diameter with application-specific thickness and electrical characteristics.

Conductive 4 Inch 4H-SiC Substrate

Conductive 4H-SiC substrates are commonly selected when the substrate needs to provide a defined electrical path for semiconductor device fabrication and related process development.

The conductive configuration can be specified according to parameters such as 4H crystal structure, N-type conductivity, resistivity, thickness, orientation and surface finish.

For customers developing or evaluating SiC-based power devices, the 100 mm format provides a useful intermediate platform between small research wafers and larger-volume wafer formats.

Semi-Insulating 4 Inch 4H-SiC Substrate

Semi-insulating 4H-SiC substrates are designed for applications where high substrate resistivity is important.The semi-insulating configuration offered for this product is based on a typical thickness of 500 μm and resistivity of ≥1 × 10⁷ Ω·cm, subject to the final specification.

These substrates can be considered for RF-oriented semiconductor development, microwave device research and other processes where substrate electrical isolation is an important material consideration. For customers evaluating RF structures on SiC, the 4 inch format offers a practical 100 mm platform for process development and prototype fabrication.

4 Inch SiC Wafer for Research and Process Development

A 4 inch SiC substrate is particularly suitable for semiconductor laboratories, prototype development and process evaluation where a 100 mm wafer format is already supported by existing equipment.

Typical development activities may include:

• SiC power device process development
• MOSFET and Schottky diode research
• RF and microwave material evaluation
• Epitaxial growth studies
• Surface processing experiments
• Wafer fabrication process development
• Semiconductor material characterization

The actual suitability of a substrate should be determined by the electrical, crystalline, geometrical and surface requirements of the specific process.

4H-SiC Substrate Selection: Conductive or Semi-Insulating?

The choice between conductive and semi-insulating material depends primarily on the electrical structure of the intended device or experiment.

Conductive 4H-SiC is generally considered when controlled substrate conductivity is required.

Semi-insulating 4H-SiC is more appropriate when high substrate resistivity and electrical isolation are important to the application.

Selecting the correct substrate configuration at the beginning of a project can help avoid unnecessary process adjustments later.

Why Use a 4 Inch SiC Substrate?

The 4 inch format remains relevant even as the semiconductor industry moves toward larger wafer diameters. For projects using a smaller wafer format, customers can also compare this platform with our 2 inch 4H-SiC wafer option.

A 100 mm SiC substrate can be useful when:

• A mature and established wafer format is required
• Research equipment is configured for 4 inch wafers
• Material consumption needs to be controlled
• Prototype or pilot-scale process development is being performed
• Different substrate materials need to be evaluated
• A project is transitioning from small research wafers toward larger formats

The appropriate wafer diameter ultimately depends on the customer's equipment, process flow and development stage. When a larger wafer area is required, customers may also evaluate our 6 inch 4H-SiC substrate configuration.

Request a 4 Inch 4H-SiC Substrate Specification

If you are evaluating a 100 mm SiC substrate for research, process development or device fabrication, provide your required conductivity type, resistivity, thickness, surface finish and wafer grade.

HMT can review the specification and recommend a suitable 4 inch 4H-SiC substrate configuration based on the intended application.