R Grade 6 inch SiC Substrate Wafer Manufacturer

Dimension: 6 inch
Grade: Research Grade
Type: 4H-N ; 4H-SI
Thickness: 350um 500um

Product Description

Buy high-quality 6 inch Research Grade SiC Substrate Wafers directly from HMT, a leading Silicon Carbide wafer manufacturer. Specifically designed for university research labs, R&D projects, and semiconductor device testing, our 150mm R Grade SiC substrates offer an exceptionally cost-effective solution for process development. Available in both 4H-N conductive and 4H-HPSI (High-Purity Semi-Insulating) polytypes, these R Grade 6'' SiC wafers provide reliable thermal and structural performance, customizable thickness (350µm–500µm), and low micropipe density (MPD) for non-commercial laboratory trials.

Technical Specifications (150mm / 6 Inch)

Parameter	4H N-Type (Conductive)	4H High-Purity Semi-Insulating (HPSI)
Diameter	150.0 ± 0.2 mm	150.0 ± 0.2 mm
Grade	Research Grade (R Grade)	Research Grade (R Grade)
Resistivity	0.015 – 0.028 Ω·cm	＞1E7 Ohm.cm
Thickness	350 µm ± 25 µm	500 µm ± 25 µm
Micropipe Density (MPD)	< 1 cm⁻²	< 1 cm⁻²
Surface Finish	Double Side Polished (DSP)	Double Side Polished (DSP)
Roughness	≤0.2nm	≤0.2nm
Package	25PCS in one cassette	25PCS in one cassette

Why Choose R Grade SiC Wafers for R&D Projects?

While Production Grade (P Grade) SiC wafers are tailored for high-yield commercial power devices and RF fabrication, Research Grade (R Grade) substrates serve an essential role in early-stage semiconductor research:Budget-Friendly Prototyping: Significantly lowers the barrier to entry for experimental trials, photo-lithography testing, and academic thesis projects. Stable Lattice Compatibility: Retains the high thermal conductivity and lattice matching benefits of single-crystal 4H-SiC without the high cost of prime-grade wafers.

If your project requires lower defect counts for mass component production, please explore our high-yield [Production Grade 6 inch SiC Substrate] page.

6 inch research grade 4H-N SiC substrate 150mm HPSI research grade silicon carbide wafer

Custom Surface & Edge Processing Options To meet specific experimental requirements, our 6-inch Research Grade SiC substrates can be customized with:

Surface Roughness (Ra): < 0.2 nm (CMP polished, Epi-ready finish optional).
Orientation Off-cut: On-axis or 4° off-axis toward <11-20> for optimal epitaxial growth.
Laser Marking: Custom alphanumeric ID marking on the back or edge for sample tracking during lab processing.

Quality Assurance & Packaging Standards Every batch of 150mm R Grade SiC wafers undergoes strict quality characterization before shipment:

X-Ray Diffraction (XRD): Verifies single-crystal lattice orientation and crystal quality.
Non-Contact Profilometry: Ensures precise total thickness variation (TTV) and bow/warp control.
Cleanroom Packaging: Double-bagged under Class 100 cleanroom conditions in anti-static cassette containers to prevent contamination during transit.

application of 6 inch sic wafers

Applications & Use Cases

Academic & Institutional Research:Device architecture modeling, material analysis, and optical testing.
Epitaxial Growth Testing:Substrates for GaN-on-SiC and SiC-on-SiC thin-film deposition experiments.
Process Calibration: Ideal for equipment setup, etching rate testing, and ion-implantation tuning.

For advanced heterostructure development, we also supply ready-to-use [SiC Epitaxial Wafers] tailored for power electronics.

Q: What is the main difference between Research Grade (R Grade) and Production Grade SiC Wafers?

A: Research Grade SiC wafers have slightly higher micropipe or defect density compared to Production Grade, making them significantly more economical for non-commercial laboratory testing, process equipment calibration, and preliminary thesis research.

Q: What is the minimum order quantity (MOQ) for Research Grade SiC wafers?

A: We support university labs and startup projects with flexible MOQs.