4H-N Unpolished SiC Wafer

Homray Material Technology offer Un-Polished SiC wafer with 440um 4H-N substrate thickness. Both 4 inch and 6 inch of Un-Polished SiC Wafer are available in HMT company. Domestic and foreign customers purchase without lapping raw SiC wafer can be used for lapping and polishing equipment testing. Quality Un-Polished SiC Wafer supplier & manufacturer in China, contact us now!

 

Compared to conventional Si-devices SiC-based electronics offers:faster switching speed
Higher voltages
Lower parasitic resistances
Smaller size
Less cooling required due to high-temperature capability

Silicon carbide with high voltage resistance, high temperature resistance, high frequency, radiation resistance and other excellent electrical characteristics, breaking through the physical limitations of silicon based semiconductor materials, is the third generation of semiconductor core materials. Silicon carbide materials can be made into silicon carbide based gallium nitride radio frequency devices and silicon carbide power devices. Benefiting from the development of 5G communications, national defense, new energy vehicles and new energy photovoltaic, silicon carbide demand is growing at a considerable rate.