As-cut SiC Wafer With Lowest MPD
Diameter: 100mm 150mm
Type: 4H-N Conductive
Thickness: About 400um
Package: Cassette
Product Description
Homray Material Technology offer 4 inch and 6 inch As-cut SiC wafers. As-cut SiC Wafer is a type of silicon carbide wafer that has been cut from SiC Ingots and has not processing with any additional polishing or surface treatment. It is widely used in the semiconductor industry for its unique properties and high performance in various applications.
Product Overview
The As-cut SiC Wafer has a diameter of 4 inches and a thickness of about 400um. It is conductive N type wafer with a resistivity range of 0.015-0.025 Ohm-cm. The surface finish of the wafer is as-cut, which means it has a rough and unpolished surface.
As-cut SiC Wafer offers a range of unique properties and high performance in various applications. Its 4-inch diameter, low resistivity, and as-cut surface finish make it a popular choice in the semiconductor industry. With its increasing demand and utilization, As-cut SiC Wafer is expected to play a significant role in the advancement of technology and innovation in the future.
- Diameter: The 4-inch diameter makes it suitable for use in various semiconductor devices and applications.
- Resistivity: The resistivity range of 0.015-0.025 Ohm-cm makes it highly conductive and ideal for applications that require low resistance.
- Thickness: With a thickness of about 400um, the As-cut SiC Wafer offers a good balance between strength and flexibility, making it suitable for a wide range of applications.
- Surface Finish: The as-cut surface finish provides a rough and unpolished surface, making it suitable for certain applications where a specific surface roughness is required.
- Type: The As-cut SiC Wafer is a conductive N type, which means it has an excess of electrons and is widely used in electronic devices.
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