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  • SiC Substrate Wafer Manufacturer

    Dimension:4inch 6 inch 8 inch
    Grade:Dummy Grade

    Type: 4H-N ; 4H-SI

    Thickness: 350um or 500um

  • HPSI 8 Inch SiC Substrate Wafer Manufacturer

    Type:HPSI
    Diameter: 200±0.2mm
    Thickness: 500±25um
    Grade: D and P

     

  • 6 inch P Grade SiC Wafer Manufacturer

    Type: 4H-N 
    Diameter: 6inch / 4inch
    Grade: P Grade / D Grade
    Product Name: SiC Substrate

  • 6 inch D Grade SiC Wafer Manufacturer

    Grade: D Grade
    Type: 4H-N
    Dimension:150mm
    Thickness:350±25um

  • 4 inch P Grade SiC Wafer Manufacturer

    Type: 4H-N 
    Dimension: 4 inch
    Grade: D R P
    Product Name: SiC Substrate

  • D Grade 4 inch SiC Substrate Manufacturer

    Product Name: SiC Substrate
    Grade:  Dummy Grade
    Type: 4H-N
    Thickness: 350um

  • 2 inch SiC Wafer Manufacturer

    Product Name: SiC Substrate
    Grade:  Dummy Grade
    Type: 4H-N
    Dimension: 2 inch

  • Conductive 4H-N 6 Inch SiC Substrate Manufacturer

    Dimension:6inch
    Grade:  Dummy Grade
    Type: 4H-N
    Thickness: 350um

  • R Grade 6 inch SiC Substrate Wafer Manufacturer

    Dimension: 6 inch
    Grade: Research Grade 
    Type: 4H-N ; 4H-SI
    Thickness: 350um 500um

  • SiC Substrate Wafer (Production Grade)

    Product Name: Silicon Carbide Substrate
    Grade: Production Grade 
    Type: 4H-N ; 4H-SI
    Micropipe Density:
    ≤1 cm-2 

  • 4 inch SiC Substrate Manufacturer

    Dimension:4inch 
    Grade:D/P Grade

    Type: 4H-N ; 4H-SI
    Thickness: 350um or 500um

     

  • SiC Substrate Wafer (Ultralow MPD Grade)

    Product Name: Silicon Carbide Substrate
    Grade: Ultralow MPD Production Grade 
    Type: 4H-N ; 4H-SI
    Micropipe Density:
    ≤0.5 cm-2

  • Low MPD 4 inch SiC Substrate Manufacturer

    Dimension: 4 inch
    Type: 4H-N
    MPD: <0.5cm2
    Grade:Production Grade

  • 2 inch As-cut SiC Wafer T-1200um

    Diameter: 50.8mm
    Type:Conductive N type 
    Thickness: 1200um
    Package: Cassette

  • 2 inch Raw Cut SiC Wafer T-1100um

    Diameter: 50.8mm
    Type:Conductive N type 
    Thickness: 1100um
    Package: Cassette

  • 2 inch As Cut SiC Wafer Manufacturer

    Type:Conductive N type 
    Diameter: 2inch / 4inch
    Thickness: 600um Customized
    Package: Cassette

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M.P: +86-15366208370 ; +86-15366203573  
E-mail: kim@homray-material.com ; tina@homray-material.com
HMT Gallium Nitride (GaN) Wafer Website: www.ganwafer-hmt.com