4H-SiC Substrate Manufacturer-The Third Generation Of Semiconductor Materials

SiC Material has wide band gap width, high breakdown electric field, high thermal conductivity and high electron saturation rate of physical properties, so that it has high temperature resistance, high pressure resistance, high frequency, high power, radiation resistance and other advantages, can reduce downstream product energy consumption, reduce terminal volume. The band gap width of Silicon Carbide (SiC)is about 3.2eV, and the wide band width of Silicon is 1.12eV, which is about 1/3 of the band gap width of Silicon Carbide, indicating that Silicon Carbide material has significantly better high pressure resistance than Silicon material.

Homray Material Technology provide both N type-SiC and SI type-SiC Substrate Wafer with standard and customized high quality SiC single crystal wafer. HMT as the leading manufacturer of Silicon Caribde wafer, our 4H-SiC wafers are purchased and used by research insititutes and technology companies around the world. 

SiC substrate is divided according to resistivity: Semi-insulating type SiC Substrate: refers to the SiC Substrate with resistivity higher than 1E9Ω ·cm, which is mainly used to manufacture GaN microwave RF devices. Microwave radio frequency devices are basic components in the field of wireless communication. China is vigorously developing 5G technology to release the demand for SiC Substrates.

N type Conductive SiC substrate: refers to the resistivity of SiC substrate in 0.015~0.025Ω·cm. SiC Epitaxial wafers grown from conductive SiC substrates can be further made into power devices. Power devices are the core components of power electronics conversion devices, which are widely used in new energy vehicles, photovoltaic, smart power grids, rail transit and other fields. Automotive electrification trend is favorable for SiC development.