Silicon carbide SiC is regarded as a kind of beyond the limits of silicon power device material, compared with silicon devices in the field of new energy better performance, thus SiC power devices are widely used light volt inverter, rail transportation, as well as the primary drive in the new energy automotive inverter, DC/DC converter, car charger and charging system of charging pile, etc.

As the leading manufacturer of SiC substrate wafer, Homray Material Technology provide 4 inch and 6 inch 4H-N type (Doped with Nitrogen) SiC wafer.We also provide 4H semi-insulating type(Un-doped) with favourable price.

Rf devices are the core components of wireless communication, including RF switch, LNA, power amplifier and filter, etc. At present, silicon-based LDMOS devices have been applied for many years, mainly in the low-frequency fields below 4GHz. With the popularization of 5G communication technology, the performance requirements of power amplifier are becoming higher.

Gallium nitride GaN RF devices based on SiC have the advantages of high thermal conductivity of silicon carbide and high power RF output of GaN in high frequency band, which can meet the requirements of HIGH frequency performance and high power processing capability of 5G communication. At present, GaN based on SiC substrate devices have gradually become the mainstream technology of 5G power amplifiers, especially acer power amplifiers.

Using SiC substrate making devices have more obvious advantages compared with Si based devices, which are embodied in:
(1) Lower impedance, can reduce the product volume, improve conversion efficiency;
(2) higher frequency, the working frequency of SiC devices can reach 10 times of silicon based devices, and the efficiency does not decrease with the increase of frequency, can reduce the energy loss;
(3) Can operate at a higher temperature, while the cooling system can be done more simply. Silicon carbide power devices can work at temperatures above 600℃, four times that of the same silicon based devices, and can withstand more extreme working environments.