SiC Wafer Characteristics Compare With Silicon

Silicon carbide (SiC), as a representative material of the third generation of semiconductor materials, is a silicon and carbon compound with 1X1 covalent bond. It is said that silicon carbide was first discovered in meteorites 4.6 billion years ago when the solar system was born, so it is also known as the semiconductor material that has experienced 4.6 billion years of time.

Homray Material Technology provide high quality SiC wafer to electronic and optoelectronic industry. SiC wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC wafer is more suitable for high temperature and high power device. Homray material can supply 4inch and 6 inch SiC wafer , both 4H-N conductive type and 4H-SI semi-insulating type. 

Compared with traditional Silicon materials, SiC has three characteristics:

1.Large band gap width, high critical breakdown field strength and high thermal conductivity. Specifically, in terms of band gap width, 4H SiC is three times that of Silicon, so it can work stably at higher temperatures (such as automotive electronics)

2.In terms of the critical breakdown field strength, SiC material can reach 10 times that of Silicon, and can produce high-voltage power devices under the condition of higher impurity concentration and thinner drift layer thickness, so as to realize the three characteristics of "high voltage", "low conduction resistance" and "high frequency" at the same time.

3.In terms of thermal conductivity, SiC can reach 3 times that of silicon, which can improve the thermal conductivity, and high thermal conductivity is also conducive to the development of electronic components to more miniaturized.