6 inch SiC Boule Manufacturer

150mm 6 inch (Silicon Carbide) SiC Boule 4H-N in Stock in HMT company.We offer 6 inch SiC Wafer and 6 inch SiC Boule wiht High-quality, low defect density for high-power devices applications. We have 350um and 500um thickness 6 inch SiC Wafers and thickness >15mm SiC Crystal Boules for different customers. We have completed production lines of SiC Boule Growth,process and testing. 

We use safety wafer box package 6 inch SiC Boules then delivered to customers by International Express.
 

The main form of SiC in semiconductors is as a substrate material. SiC substrate is the cornerstone of GaN and SiC applications in the third generation semiconductor materials. SiC materials mainly grow SiC epitaxial layer on conductive SiC substrate, which is used in all kinds of power devices. In recent years, with the maturity of technology and the decrease of preparation cost, the application of SiC in the field of new energy continues to penetrate.

6 inch SiC Boule Basic Spec