6 inch SiC Boule/ Ingot Manufacturer

HMT as the 6 inch SiC Ingots/SiC Boule professional manufacturer, we supply high quality 4 inch and 6 inch SiC ingots SiC Boules with best price on the market. SiC ingots can be cut to 4 inch and 6 inch N type SiC substrate. Purchase SiC ingots/SiC Boule and SiC substrate wafer from HMT company today and discuss your project requirments now.



HMT has a complete SiC(silicon carbide) wafer substrate production line integrating SiC boule growth, crystal processing, wafer processing, polishing, cleaning and testing. We supply commercial 4H SiC wafers with semi insulation and conductivity in on-axis or off-axis, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.


  
Electronics based on SiC material shows advantages compared to Si-devices, where environmental conditions are adverse, i.e. ionizing radiation, heat-aggressive chemicals. For instance, SiC-based electronics would help to reduce weight and therefore costs of spacecraft, since SiC-devices showed to be much more resistant to ionizing radiation than Si-devices. Thus, a reduction of radiation-shielding is possible. Further, they may reduce or eliminate the use of cooling systems that have to be implemented as soon as Si-electronics is used.

 

SiC Boule Package