N Type Conductive SiC Boule

SiC is processed from Boule to wafer in the same way as other semiconductors. SiC Ingot SiC Boule is generally grown on the {0 0 0 1} seed crystal. The SiC crystal orientation can be determined by X-ray diffraction, such as <0 0 0 1>, <1 1-20 >. SiC Crystals can be sliced to many SiC substrate wafers, which are finally grounding, polishing and cleaning.

Homray Material Technology provides high quality N Type Conductive SiC Boule to electronic and optoelectronic industry. SiC materials are next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC susbstrates are more suitable for high temperature and high power device. We offer 4inch and 6inch SiC ingot SiC Boule and 4 inch to 8 inch SiC wafers.

SiC Boule Spec:
Diameter: 4 inch 100mm/ 6 inch 150mm
Orientation:Off axis : 4.0° toward < 11-20>±0.5°
Packaging:Unit Packaging