Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Wafer, GaN Substrate Wafer, Silicon Carbide(SiC) Wafer, SiC Substrate Wafer, 4H-N/4H-SI SiC Substrate, and GaN Epi Wafer (GaN-On-Si, GaN-On-Sapphire, GaN-On-SiC ), SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly
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6 Inch SiC Ingots
Diameter: 150±0.2mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade -
导电型&半绝缘型碳化硅晶锭晶棒
长度:Min ≥15mm
尺寸:4英寸及6英寸
类型:导电N型/半绝缘SI型
包装:单晶锭密封包装 -
SiC Substrate Wafer (Production Grade)
Product Name: Silicon Carbide Substrate
Grade: Production Grade
Type: 4H-N ; 4H-SI
Micropipe Density:≤1 cm-2 -
碳化硅晶片 产品级SiC衬底晶片
等级:产品级碳化硅晶片
厚度:350um;500um
尺寸:4英寸 6英寸
类型:4H-N导电型 ; 4H-SI半绝缘型