Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of SiC Wafer(N Type), SiC Substrate Wafer(4H-N), As Cut SiC Wafer(Conductive Type), SiC Boule, 4H-SI/4H-N SiC Substrate, and SiC Epi Wafer. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality SiC Boule/Ingot and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading SiC Boule/Ingot and Substrate Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded
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6 inch SiC Boule/ Ingot Manufacturer
Diameter: 150±0.2mm
Thickness: Min >15mm
Type: 4H-N or 4H-SI
Grade: D Grade / P Grade -
8 inch D Grade SiC Wafer Manufacturer
Type: 4H-N
Diameter:8inch / 6inch
Grade: Production / Dummy
Product Name: SiC Wafer
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6 inch P Grade SiC Wafer Manufacturer
Type: 4H-N
Diameter: 6inch / 4inch
Grade: P Grade / D Grade
Product Name: SiC Substrate -
2 inch As Cut SiC Wafer Manufacturer
Type:Conductive N type
Diameter: 2inch / 4inch
Thickness: Customized
Package: Cassette