NVIDIA, TSMC, and other industry giants plan to adopt silicon carbide (SiC) wafers for the interposer layer in GPU advanced packaging, replacing traditional si materials. HMT can supply 6inch 8inch and 12inch SiC Substrate Wafer with 4H-N and 4H-SI type.This move is expected to significantly improve heat dissipation efficiency and address thermal bottlenecks in CoWoS packaging for high-power chips.

In addition, the penetration rate of 800V high-voltage platform models in the domestic new energy vehicle sector has surged to 42% within half a year. The launch of models such as Xiaomi’s YU7 and BYD’s full-domain 1000V architecture has driven a sharp increase in demand for automotive-grade SiC. It is projected that SiC usage in domestic new energy vehicles will reach 8 million wafers in 2025. China’s global share of substrate shipments has reached 35%, breaking the monopoly of the United States, Japan, and the Netherlands.

Market Landscape
The global SiC device market is still dominated by international players such as STMicroelectronics, Infineon, and Wolfspeed, which collectively hold an 83% market share. However, domestic manufacturers are rapidly gaining ground in the substrate segment, with a year-on-year market share growth exceeding 180%.

Drivers of Growth

• New Energy Vehicles: High-Voltage Platform Necessity
  SiC inverters for 800V platforms can improve the range of new energy vehicles by 10% and reduce fast-charging time by 20%. By 2026, global 800V models are expected to account for over 30% of the market, driving a 58% annual growth in demand for automotive-grade SiC devices.

• AI Computing: Power Supply and Packaging Dual Demand
  The power consumption of single server racks in data centers has risen from the traditional 12kW to 20–50kW in AI data centers. Under an 800V HVDC architecture, the value of SiC components is projected to reach ¥0.3–0.4 per watt, with a market size of ¥4 billion corresponding to a 100GW scale by 2030. If 70% of CoWoS interposers are replaced with SiC, approximately 2.3 million 12-inch substrates (equivalent to 9.2 million 6-inch wafers) will be required by 2030.
  
  

• Photovoltaics and Energy Storage: Strong Policy Support
  The Chinese government mandates a 50% penetration rate of SiC in new photovoltaic power stations by 2025. SiC inverters are 3% more efficient than traditional products, enabling an additional 30 million kWh of annual electricity generation per 1GW power station. The demand for SiC in domestic photovoltaics and energy storage is expected to grow by over 60% by 2025.

• AI Computing
  NVIDIA plans to adopt SiC interposers in the CoWoS advanced packaging of its next-generation GPUs by 2027. TSMC is concurrently developing 12-inch single-crystal SiC for heat dissipation substrates, replacing traditional ceramic substrates to address thermal challenges in high-power GPUs. If 70% of CoWoS interposers are replaced with SiC, over 2.3 million 12-inch substrates will be required by 2030, far exceeding current supply capacity.

The global SiC device market was valued at approximately $4.36 billion in 2024. Analysts project it will reach $22.9 billion by 2030, with a compound annual growth rate (CAGR) of 32%.